Recently,
Researchers in India have shown for the first time infrared (IR)
light emission and absorption with GaN nanostructures.
Key Points
This
is the first time that infrared light-matter interactions are
demonstrated in GaN.
Researchers
have utilized a scientific phenomenon called surface polariton
excitations in GaN nanostructures that lead to light-matter
interactions at IR spectral range.
This
can help develop highly efficient infrared absorbers, emitters,
and modulators that are useful in defence technologies, energy
technologies, imaging, sensing, and so on.
Polaritonic technologies
have attracted a wide range of applications, such as secure high-speed
light-based communication (LiFi), next-generation light sources, solar
energy converters, quantum computers, and waste-heat converters.
About Gallium Nitride (GaN)
One
of the most advanced semiconductors.
It
is a widely used material for blue light emission.
Advantages: Reliable,
compact size, high efficiency, fast switching speed, low on-resistance,
and high thermal conductivity.
GaN
Technology is of strategic importance with its
application to 5G, space and defence applications.
